![]() As a result of this depletion region grows in size thereby reducing the effective width of the channel.ĥ. This in turn increases the reverse bias voltage across the gate source junction. ![]() It is because of the fact that there is an increase in V ds. Here the drain current is increased slowly as compared to ohmic region.Ĥ. ![]() I d increases with increase in drain to source voltage. This shows that FET behaves like an ordinary resistor. When V ds is applied and it is increasing the drain current I d also increases linearly up to knee point.Ģ. In order to explain typical drain characteristics let us consider the curve with V gs= 0 V.ġ. ![]() There are two important characteristics of a JFET.ĭrain characteristics show the relation between the drain to source voltage V ds and drain current I d. The family of curves that shows the relation between current and voltage are known as characteristic curves. ![]()
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